Transphorm’s SuperGaN Gen V FET Delivers World’s Lowest Packaged On-resistance, Targeting Electric Vehicle Applications
2.12.2020 14:00:00 EET | Business Wire | Press release
Transphorm Inc. (OTCQB: TGAN)—a pioneer and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today the sampling of its first Gen V device under its proprietary SuperGaNTM brand. The TP65H015G5WS, Transphorm’s new Gen V device, targets the Electric Vehicle (EV) market and provides industry-leading performance enhancements, ease of designability, and optimized cost structure that is inherent to the SuperGaN device family. Notably, the Company’s Gen V GaN solution offers the world’s lowest packaged on-resistance and delivers a 25% lower power loss over Silicon Carbide (SiC) in a standard TO-247-3 package, strengthening the potential of GaN in the EV power conversion market.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20201202005276/en/
Lowest Rds(on) SuperGaN™ FET in a TO-247 package from Transphorm poised for growth in EV market. (Graphic: Business Wire)
In March 2020, Marelli, one of the world's leading global independent suppliers to the automotive sector, announced a strategic partnership with Transphorm to collaborate on new GaN-based automotive/EV power conversion solutions including On-board Chargers (OBCs), DC-DC Converters and Powertrain Inverters for electric and hybrid vehicles. To date, Marelli has made a $4 million equity investment in Transphorm and has committed to an additional $1 million equity investment in Q1 2021.
Dr. Joachim Fetzer, CEO, Electric Powertrain Marelli, commented, “Transphorm’s demonstration of achieving 10 kilowatts of power from a discrete packaged GaN device in a bridge configuration is further validation of the exciting promise of GaN for electric vehicle converters and inverters. As part of our previously announced partnership, we will continue to evaluate Transphorm’s industry-leading GaN devices and work together in support of a multi-year EV systems product roadmap.”
“We continue to innovate Transphorm’s SuperGaN FET technology, now offering the world’s lowest on-resistance in a standard TO-247-3 package in the market, targeted for electric vehicles and other higher power conversion applications. This allows customers to drive into double digit kilowatts with a single device, continuing to demonstrate GaN’s ability to provide higher performance, lower system cost and higher power density,” said Primit Parikh, COO and Co-founder, Transphorm. “Our Gen V GaN platform is creating new design opportunities for power levels that previously required paralleling, while still offering the greater than 99% efficiency.”
Transphorm’s SuperGaN™ Technology Outperforms Silicon Carbide
The SuperGaN Gen V platform incorporates all the learnings from its Gen IV predecessor, patented reduced packaging inductance technology, ease of designability and drivability (Vth of 4 V for noise immunity), and gate robustness of +/- 20 Vmax along with a simplified and reduced assembly structure. In a recent article published in EEWorld, “Pushing the Boundaries of High Voltage GaN Power Conversion,” the company’s TP65H015G5WS was compared to a similar on-resistance leading-edge SiC MOSFET in a standard TO-247-3 package. The devices were both operated up to 12 kW at 70 kHz in a half bridge synchronous boost converter, resulting in Transphorm’s GaN device demonstrating up to 25% lower losses.
Transphorm has begun sampling the SuperGaN Gen V FET, a 15 mΩ 650 V device, which is unavailable with today’s single chip e-mode GaN technology due to its gate sensitivity. Matching the lowest R available from typical SiC MOSFETs in a discrete package, the solution is capable of driving more than 10 kW depending on the target application, such as EV OBCs and powertrain inverters, power supplies for rack powered data center servers, uninterruptible industrial power applications, and renewable photovoltaic inverters. The TP65H015G5WS will also be available for die level module solutions that enable further paralleling for even higher power. The Company anticipates its Gen V FET device to receive JEDEC qualification in mid-2021 with AEC-Q101 qualification expected thereafter.
About Marelli
MARELLI is one of the world’s leading global independent suppliers to the automotive sector. With a strong and established track record in innovation and manufacturing excellence, our mission is to transform the future of mobility through working with customers and partners to create a safer, greener and better-connected world. With around 60,000 employees worldwide, the MARELLI footprint includes 170 facilities and R&D centers across Asia, the Americas, Europe, and Africa, generating revenues of 13.4 Billion Euro (JPY1,541billion) in 2019.
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa.
The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.
To view this piece of content from cts.businesswire.com, please give your consent at the top of this page.
View source version on businesswire.com: https://www.businesswire.com/news/home/20201202005276/en/
Contact information
Transphorm Contact:
Heather Ailara
211 Communications
+1.973.567.6040
heather@211comms.com
Marelli Contacts:
Maurizio Scrignari
maurizio.scrignari@marelli.com
Daniela Di Pietrantonio
daniela.dipietrantonio@marelli.com
Tel.: +39 02 972.27.903
Communication Department, Japan
pr@marelli.com
Tel.: +81-48-660-2161
About Business Wire
For more than 50 years, Business Wire has been the global leader in press release distribution and regulatory disclosure.
Subscribe to releases from Business Wire
Subscribe to all the latest releases from Business Wire by registering your e-mail address below. You can unsubscribe at any time.
Latest releases from Business Wire
Biocytogen Announces Clinical Milestone with First Patient Dosed in Phase 1 Trial of IDEAYA’s First-in-Class B7H3/PTK7 Bispecific TOP1 ADC IDE03428.2.2026 02:00:00 EET | Press release
Biocytogen Pharmaceuticals (Beijing) Co., Ltd. (Biocytogen, SSE: 688796; HKEX: 02315), a global biotechnology company that drives the research and development of novel antibody-based drugs with innovative technologies, today announced that its partner IDEAYA Biosciences, Inc. (“IDEAYA”; Nasdaq: IDYA) has dosed the first patient in IDEAYA’s Phase 1 dose-escalation/expansion clinical trial of IDE034, an investigational B7H3/PTK7 bispecific TOP1 ADC. Pursuant to the companies’ option and license agreement, first patient dosing triggers a $5 million milestone payment to Biocytogen. According to IDEAYA, the Phase 1 study is designed to characterize IDE034’s safety profile, tolerability, and PK as a monotherapy, and IDEAYA also intends to evaluate combination regimens with DNA damage response (DDR) -targeting agents such as its oral PARG inhibitor IDE161 as the program advances. IDE034 is a potential first-in-class bispecific B7H3/PTK7 TOP1 ADC, independently developed by Biocytogen and lice
IQM and Real Asset Acquisition Corp. to Host Conference Call/Webcast to Discuss Proposed Transaction27.2.2026 14:00:00 EET | Press release
IQM Finland Oy, a global leader in full-stack superconducting quantum computers (“IQM”, “IQM Quantum Computers” or the “Company”), and Real Asset Acquisition Corp. (Nasdaq: RAAQ), a special purpose acquisition company (“RAAQ”), announced that they will host a conference call to discuss their recently announced business combination, including certain transaction highlights. This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20260227472716/en/ IQM Radiance quantum computer As previously disclosed, on February 23, 2026, IQM and RAAQ announced they have entered into a definitive business combination agreement, which will result in IQM becoming a public company and listing American Depositary Shares on one of the two leading U.S. stock exchanges. The transaction provides funding with the aim to accelerate IQM’s technology and commercial development towards fault-tolerance quantum computing, further advancing its position as a leading p
HighRadius Launches $0 Implementation Fee, $0 Subscription Fee via Outcome Based Pricing for oCFO Software27.2.2026 13:00:00 EET | Press release
HighRadius launches Office of the CFO first Outcome Based Pricing with $0 Implementation fee and $0 Subscription until Go-Live. Customers only pay a fraction of realized gains based on P&L impact. Chapter 1: Outcome Based Pricing (OBP) Introduction of OBP: HighRadius, a provider of 190+ AI agents for Order-to-Cash, Accounts Payable, Record-to-Report, and Treasury introduces Outcome Based Pricing (OBP). Three Components of OBP: Customers pay a) $0 in Implementation fees, b) $0 in Subscription fees until Go Live, c) HighRadius earns a fraction of the actual savings realized by the client. Chapter 2: US GAAP & ASC 606 Constraints Not Designed for Innovation: The traditional ASC 606 model requires companies to standardize and recognize revenue based on contractual obligations. For a traditional SaaS subscription, the obligation is access to software over time. AI agents are designed to deliver quantifiable, real-time Business Outcomes that do not fit the traditional accounting framework. C
Kioxia Appoints Yoshihiko Kawamura as Chief Financial Officer27.2.2026 10:15:00 EET | Press release
Kioxia Holdings Corporation (TOKYO:285A), a world leader in memory solutions, today announced the appointment of Yoshihiko Kawamura as Chief Financial Officer (CFO), effective April 1, 2026. Mr. Kawamura brings extensive international experience to Kioxia, having held assignments at Mitsubishi Corporation’s U.S. headquarters, served as General Manager of its Chicago office, and completed a tenure at the World Bank. At Hitachi, Ltd., he held senior leadership positions, including Chief Strategy Officer (CSO), Chief Financial Officer (CFO), and Chief Risk Management Officer (CRMO), where he was instrumental in leading the company’s management reforms. Since joining Kioxia as Executive Vice President in June 2025, Mr. Kawamura has worked closely with the executive team to advance the business through strategic capital and financial planning. Following its initial public offering on the Prime Market of the Tokyo Stock Exchange in December 2024, Kioxia is entering a new phase of growth char
DNP Invests in Rapidus to Support the Establishment of Mass Production for Next-Generation Semiconductors27.2.2026 09:18:00 EET | Press release
Dai Nippon Printing Co., Ltd. (DNP, TOKYO:7912) today announced that it has participated in Rapidus Corporation’s funding round as one of the round investors. This strategic funding initiative supports Rapidus’ plan to steadily progress from its current R&D phase to mass production of 2nm (10⁻⁹ meters) logic semiconductors by 2027. Through this initiative, DNP will advance the development and mass production of EUV lithography photomasks and support Rapidus as it establishes a mass production system for 2nm & next-generation semiconductors. Background In recent years, the rise in energy consumption, in line with increased data generation, has become a challenge, driving demand for next-generation semiconductors capable of improving device performance and reducing power consumption. Next-generation semiconductors manufactured using EUV lithography enable the formation of finer patterns on silicon wafers compared to currently available technologies. This in turn is boosting expectations
In our pressroom you can read all our latest releases, find our press contacts, images, documents and other relevant information about us.
Visit our pressroom